21 episodes

This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).

Physics of Microfabrication: Front End Processing MIT

    • Technology

This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).

    Lecture 03: Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.); Wafer Cleaning and Gettering

    Lecture 03: Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.); Wafer Cleaning and Gettering

    • 1 hr 1 min
    Lecture 04: Wafer Cleaning and Gettering (cont.)

    Lecture 04: Wafer Cleaning and Gettering (cont.)

    • 1 hr 12 min
    Lecture 05: Wafer Cleaning and Gettering - Contamination Measurement Techniques

    Lecture 05: Wafer Cleaning and Gettering - Contamination Measurement Techniques

    • 1 hr 16 min
    Lecture 06: Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models

    Lecture 06: Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models

    • 1 hr 14 min
    Lecture 07: Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects

    Lecture 07: Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects

    • 1 hr 11 min
    Lecture 08: Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic

    Lecture 08: Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic

    • 1 hr 3 min

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