36 episodes

The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, nanowires, and ultra-scaled transistors. Three fundamental concepts critical to the understanding of nanoelectronic devices will be explored: 1) open systems vs. closed systems, 2) non-equilibrium systems vs. close-to-equilibrium systems, and 3) atomistic material representation ...

[Audio] Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices Nanohub.org

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The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, nanowires, and ultra-scaled transistors. Three fundamental concepts critical to the understanding of nanoelectronic devices will be explored: 1) open systems vs. closed systems, 2) non-equilibrium systems vs. close-to-equilibrium systems, and 3) atomistic material representation ...

    Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

    Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

    This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues Outlook Improve Models (Contact) Investigate Scaling of Gate Length Scattering?

    Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER => Performance Deterioration Outlook and Challenges Ripples Scattering More Accurate Bandstructure Model Dissipative Scattering (Electron-Phonon)

    Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors

    Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors

    This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex devices on an atomistic representation is demonstrated.Learning Objectives:Band-To-Band Tunneling Transistors may be “better” than a superscaled MOSFET because: The subthreshold swing is possibly smaller than the ideal 60mV/dec in the best case MOSFET – i.e the device …

    Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires

    Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires

    This presentation discusses the consequences of Alloy Disorder in unstrained strained AlGaAs nanowiresRelationship between dispersion relationship and transmission in perfectly ordered wiresBand folding in Si nanowiresTranmisison in disordered wires – relationship to an approximate bandstructreReminder of the origin of bandstructure and bandstructure engineeringLocalization of wavefunctionsLearning Objectives:Alloy wires are NOT smooth“Conduction band edge” flucatuates locallyDispersion changes Transmission and Density of states show localization effects

    Nanoelectronic Modeling Lecture 34: Alloy Disorder in Quantum Dots

    Nanoelectronic Modeling Lecture 34: Alloy Disorder in Quantum Dots

    This presentation discusses the consequences of Alloy Disorder in strained InGaAs Quantum Dots Reminder of the origin of bandstructure and bandstructure engineeringWhat happens when there is disorder?Concept of disorder in the local bandstructureConfiguration noise, concentration noise, clusteringLearning Objectives:Device-to-device fluctuations in nanostructures may be significant even if the shape and size of the quantum dots remain perfectly controlled.Configuration noise, concentration noise and clustering in perfectly size and shape controlled quantum dots can lead to optical transition fluctuations that should be experimentally relevant.

    Nanoelectronic Modeling Lecture 33: Alloy Disorder in Bulk

    Nanoelectronic Modeling Lecture 33: Alloy Disorder in Bulk

    This presentation discusses disorder in AlGaAs unstrained systems in bulk. Bandstructure of an ideal simple unit cellWhat happens when there is disorder?Concept of a supercellBand folding in a supercellBand extraction from the concept of approximate bandstructureComparison of alloy disorder with the virtual crystal approximationConfiguration noise, concentration noiseHow large does an alloy supercell have to be? When does the “bulk” condition occur?Learning Objectives:Bandedges and bandgaps are influenced by: Placement / configuration disorderConcentration noise Clustering System size is very important “bulk” starts at 100,000 atoms=> Nanostructures are not “bulk” => like quantum dots, nanowires, and quantum wells vary locally

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